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On the RTS phenomenon and trap nature in flash memory tunnel oxideFANTINI, P; CALDERONI, A; SEBASTIANI, A et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1998-2001, issn 0167-9317, 4 p.Conference Paper

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Performance of GaAs JFET at a cryogenic temperature for application to readout circuit of high-impedance detectorsFUJIWARA, Mikio; SASAKI, Masahide.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 12, pp 2042-2047, issn 0018-9383, 6 p.Article

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